JPH0737233Y2 - 集束イオンビーム装置 - Google Patents
集束イオンビーム装置Info
- Publication number
- JPH0737233Y2 JPH0737233Y2 JP1989005053U JP505389U JPH0737233Y2 JP H0737233 Y2 JPH0737233 Y2 JP H0737233Y2 JP 1989005053 U JP1989005053 U JP 1989005053U JP 505389 U JP505389 U JP 505389U JP H0737233 Y2 JPH0737233 Y2 JP H0737233Y2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- electrode
- aperture
- central hole
- focused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 70
- 150000002500 ions Chemical class 0.000 claims 3
- 230000003287 optical effect Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 244000144985 peep Species 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989005053U JPH0737233Y2 (ja) | 1989-01-20 | 1989-01-20 | 集束イオンビーム装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989005053U JPH0737233Y2 (ja) | 1989-01-20 | 1989-01-20 | 集束イオンビーム装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0297744U JPH0297744U (en]) | 1990-08-03 |
| JPH0737233Y2 true JPH0737233Y2 (ja) | 1995-08-23 |
Family
ID=31208093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989005053U Expired - Lifetime JPH0737233Y2 (ja) | 1989-01-20 | 1989-01-20 | 集束イオンビーム装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0737233Y2 (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3354846B2 (ja) * | 1997-09-25 | 2002-12-09 | 株式会社日立製作所 | 倍率制御型荷電粒子ビーム照射装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63187542A (ja) * | 1987-01-28 | 1988-08-03 | Hitachi Ltd | イオンマイクロビ−ム装置 |
-
1989
- 1989-01-20 JP JP1989005053U patent/JPH0737233Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0297744U (en]) | 1990-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |